HWCVD affords the capability to synthesize fluorocarbon and organosilicon thin films. These two classes of materials are of interest for a wide range of applications, including low dielectric constant coatings for microelectronic interconnection, 'dry' photoresists. directly patternable dielectrics for lithographic production of integrated circuits, insulating biomaterials for implantable devices with complex topologies and small dimensions, low friction coatings, and semipermeable membranes. HWCVD from hexafluoropropylene oxide (C3F6O) dramatically reduces cross-link and defect concentrations in fluorocarbon coatings, producing films which are spectroscopically indistinguishable from bulk polytetrafluoroethylene (PTFE, Teflon (TM)). Organosilicon films can be deposited from cyclic precursors such as octamethylcyclotetrasiloxane (D-4) at extremely high rates (>2 mum/min) by HWCVD. The bonding structure of HWCVD organosilicon films is substantially different from both their plasma enhanced CVD (PECVD) counterparts and bulk siloxane polymers, such as poly (dimethysiloxane) (PDMS).