Results of measurements of the mean atomic volume (V), the glass transition temperature (T-g), the activation energy for glass transition (E-t) and the d. c. electrical conductivity (sigma) are reported and discussed for ten glass compositions of the Ga-As-Te system. The glasses studied can be represented as Ga-x(As0.4Te0.6)(100-x) glasses, with the additive Ga ranging from 0 to 12 atomic percent (at.%) in the parent As2Te3 glass. In the Ga-x(As0.4Te0.6)(100-x) glasses, changes in slope are observed in the V, T-g, E-t, sigma and other electronic properties, at the composition with a Ga content of 2 at.%. The results are compared with those obtained on introduction of Ag and Cu to the As2Te3 and the [0.5As(2)Te(3)-0.5As(2)Se(3)] glasses. Analysis of the data suggest formation of GaAs, Ga2Te3 and excess Te structural units (s.u.) in lieu of some of the original As2Te3 s.u., for addition of Ga up to 2 at.% to the parent As2Te3 glass; for higher Ga contents, formation of GaAs, GaTe and excess Te s.u. are indicated.