Ion implantation into silicon wafers coated with photoresist gives rise to large quantities of photoresist outgassing. The purpose of this undertaking was to determine the time dependence of the outgassing rate. Wafers coated with photoresist begin outgassing when implantation begins, but how fast does the outgassing rate decay once implantation stops? The photoresist outgassing decay rare determines the geometry of the gas load on a rotating disk, and is therefore relevant to the chamber design and pump placement to minimize pressure along the path of the beam. The data indicate that an implant of 50 keV boron results in an outgassing rate that depends on time as t(-0.8) where t is the time since a wafer was last implanted. Ion implantation "turns on" the outgassing thus allowing for millisecond data collection of outgassing rates.