(Zr0.8Sn0.2)TiO4 (ZST) thin films with 1 wt% ZnO addition were fabricated on n-type (100) Si substrates by reactive rf magnetron sputtering at various Ar/O-2 mixing ratios (80/20, 90/10), substrate temperatures (300, 350, and 300 degrees C), and sputtering times (from 2-4 h). The powder target composition of (Zr0.8Sn0.2)TiO4 was synthesized in the experiment. The structure of the films on Si was determined by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The deposition rate increases with increasing Ar concentration and substrate temperature. Moreover, the higher O-2 content increases the surface roughness of the deposited films. From observing the cross section and the surface morphology, ZST thin films exhibit a columnar structure. The grain size of the film increased with an increase in the substrate temperature and sputtering time and with a decrease in the oxygen partial pressure. A dielectric constant of 28 (f = 10 MHz) and a resistivity of 2.1 X 10(9) Omega m were obtained for the ZST thin films in the experiment.