A novel silicon bonding technique and its application for surface science studies in a wide temperature range of 30-1400 K is presented. The silicon single crystal is bonded on a polished tantalum plate via thin silver and tungsten interlayers deposited by evaporation in high vacuum. Upon annealing the silicon sample is bonded with a strong mechanical and good thermal contact. Several problems common to alternative sample mounting techniques an solved by this procedure. Excellent temperature control and small temperature gradients across the surface well below 1 K are demonstrated by thermal desorption data for two different adsorbates: ethane and hydrogen on Si(001)-(2x1).