Ti and TiN films are used as diffusion barrier layers in Al and Cu metallization. They are often produced using physical-vapor-deposition techniques and are subject to energetic particle bombardment during subsequent processes. Therefore, the sputtering yield for ion-induced physical sputtering is important. The absolute sputtering yields of Ti and TiN target materials with 400-700 eV normally incident N and Ar ions are measured here. The experimental values are favorably compared to simulation results from TRIM.SP, which is a vectorized Monte Carlo code simulating ion-surface interaction using a binary collision mode. The phenomenon of reactive sputtering of Ti with incident N is also discussed.