Polycrystalline La1-xCaxMnO3 films were rf-sputtered on Si substrates coated with SiO2, and the effects of deposition parameters on the temperature coefficient of resistance (TCR) values were investigated. For the temperature higher than the metal-insulator transition temperature (T-p), the temperature dependence of resistance can be described by using the small polaron model, and the TCR value increases with the activation energy E-a for the polaron hopping. For the temperature higher than TP I increasing the oxygen or Ca content of the film results in the decrease in resistivity, E-a, and TCR value. The resistivity and TCR value are also reduced in large-grained films. Applying a substrate bias can enhance the TCR value.