We have characterized the physical and electrical properties of a W-TiN stacked gate in metaloxide -semiconductor devices. The degree of tungsten crystallization was enhanced when the N-2/Ar ratio was increased during TiN sputtering deposition and/or if the annealing temperature for W-TiN films was raised over 600 degreesC. However, the lowest resistivity was observed from W-TiN films annealed at 600 degreesC. We suggest that the TiOx intermediate layer was formed between the TiN gate electrode and SiO2 if the annealing temperature increases to more than 600 degreesC. In addition, we found that TiN effectively suppresses the fluorine diffusion into SiO2, and that the N2/Ar ratio determines the flatband voltage shift of the W-TiN/SiO2/Si capacitors.