Highly conductive and transparent aluminum-doped zinc oxide thin films have been prepared from the solution of zinc acetate and aluminum nitrate in ethanol by the sol-gel process. The effect of changing the aluminum-to-zinc ratio from 0 to 5 at.% and annealing temperature from 0 degreesC to 700 degreesC in air has been investigated. The resistivities of thin films were measured as a function of annealing temperature and also as a function of aluminum dopant concentration in the solution. As-deposited films have high resistivity and high optical transmission. Annealing of the as-deposited films in air leads to a substantial reduction in resistivity. The films have a minimum value of resistivity of 1.5 x 10(-4) Ohm cm for 0.8 at. % aluminum-doped zinc oxide and a maximum transmission of about 91% when deposited on glass substrates. X-ray diffraction measurements employing Cu K alpha radiation were performed to determine the crystallinity of the ZnO:Al films which showed that the films were polycrystalline with a hexagonal structure when annealed at 500 degreesC.