Chlorosilane adsorption on clean Si surfaces: Scanning tunneling microscopy and Fourier-transform infrared absorption spectroscopy studies

Nishizawa M; Yasuda T; Yamasaki S; Shinohara M; Kamakura N; Kimura Y; Niwano M

Journal of Vacuum Science & Technology A, Vol.19, No.4, 2001-2006, 2001

Nishizawa M, Yasuda T, Yamasaki S, Shinohara M, Kamakura N, Kimura Y, Niwano M

The initial adsorption processes of SiH2Cl2 on Si(111)-(7X7) and Si(100)-(2X1) surfaces have been investigated by using infrared absorption spectroscopy and scanning tunneling microscopy. We have found that dissociation reactions of SiH2Cl2 on these two surfaces are distinctively different, SiH2Cl2 adsorption on Si(111)-(7X7) takes place via Si-Cl bond breakage, while both Si-H and Si-CI bonds of the SiH2Cl2 molecules are dissociated on Si(100)-(2x1).