The effect of an applied electric field during metal-induced lateral crystallization of a-Si is reported. Lateral growth of 300 mum is observed upon annealing the samples at 400 degreesC for 30 min while do voltage of 100 V is applied between Ni silicide pads. The dependence of growth rate on the applied voltage is studied. The trapezoid test structure employed clearly reveals that the growth rate depends on the voltage applied rather than on the electric field intensity. In addition to field-enhanced diffusion of Ni atoms, which has been supposed to be responsible for the high growth rate, the role of the bombardment of Ni atoms by electrons flowing through the a-Si layer is considered.