The radiation damage induced in Si(100) due to 1.5 MeV Sb ions has been studied as a function of fluence using the Rutherford backscattering/channeling (RBS/C) technique and Raman spectroscopy. The damage profiles have been extracted from the RBS/C spectra and the results compared with SRIM'97 code calculations. For a fluence of 1x10(14) ions/cm(2), though the position of the damage profile is in agreement with the defect profile calculated using SRIM code, theory overestimates the damage in the surface region, suggesting dynamic self-beam annealing. The total amount of damage obtained as a function of implant dose exhibits two behaviors; a small net damage and a slow rate of damage accumulation for low fluences with a crossover to faster rates beyond a dose of 1 x 10(13) ions/cm(2). At this dose, a defected-amorphized zone of a critical size can form, which may easily enlarge by further accumulation of defects at higher fluences. The total damage has been compared with the results from Raman scattering and it is observed that the net damage as detected by Raman is slightly higher at the fluences where crystalline and amorphous zones coexist. The crystalline-to-amorphous (c/a) transition in Si as a function of fluence has been investigated by RBS/C and Raman scattering. The study demonstrates that Raman scattering is more effective in probing the small concentrations of defects produced during the early stages of c/a transition.