The electron beam exposure characteristics of sputtered AlOx and spin-coatable Al2O3 resists are compared and contrasted. When exposed to an electron beam, sputtered AlOx resists on a silicon substrate undergo an intense mass loss. However, electron energy loss spectroscopy shows that even after a prolonged exposure some aluminum and oxygen remains on the silicon surface. Spin-coatable Al2O3 resist was prepared by reacting aluminum tri-sec-butoxide, Al(OBus)(3), with acetylacetone (AcAc) in isopropyl alcohol. These are negative tone resists and they are > 10(6) times more sensitive to an electron beam than the sputtered AlOx, bringing its sensitivity very close to high resolution organic resists such as calixarene. The exposure properties of spin-coatable and sputtered aluminum oxide resists are discussed together with their sensitivity, damage mechanisms, line edge roughness, and etching characteristics. A brief note on the change of methodology of resist design is added when inorganic resists are to be used in high resolution electron beam nanolithography.