This article describes the results of distortion simulations for Motorola's 200 mm electron-beam projection lithography (EPL) mask due to the fabrication process, pattern transfer, and mounting. Finite element models have been created as predictive tools, which incorporate the orthotropic elastic material properties of single crystal silicon. Both membrane-flow and wafer-few processes have been simulated, identifying the significant advantage of the former. Modeling results for parametric studies of the fabrication process and the effects of mounting under gravitational loading are presented. The predictive studies illustrate that the metal layer (Cr/TaSiN) stress most strongly influences the image placement error. It is also shown that common mounting techniques for e-beam writing and exposure are essential for minimizing pattern placement errors.