An original in situ technique was developed to measure the temperature rise and decay of a material under electron-beam (e-beam) irradiation. The technique uses the effect of temperature rise on the electrical conductivity of high-temperature superconductors that are prefabricated as-microbridges, This temperature sensor was measured to have a sensitivity greater than two orders of magnitude more than a thin-film thermocouple. A stroboscopic technique ensured nanosecond temporal resolution, and the size of the microbridge allowed for micrometer-scale spatial resolution. These measurement ranges are important for practical e-beam lithography. Experimental results were compared with results simulated by the TEMPTATION (temperature simulation) software, and qualitative agreement of simulated and measured results was found. Factors influencing the accuracy of the temperature measurement are discussed.