(Pb, La)TiO3 /CeO2/(100)InP muItilayers have been prepared by pulsed laser deposition (PLD) using a BrF laser. CeO2 (f)ilms deposited in a low oxygen pressure (PO2=LO(-5)mbar) exhibit the coexistence of stoichiometric CeO2 and oxygen deficient CeO2-x phases. The latter can be best avoided by a postdeposition annealing in a higher oxygen pressure (PO2=0.1 mbar). The PLD conditions leading to largest grain size and [111] textured CeO2 are a substrate temperature T-s=575 degreesC and a laser fluence of 4 J/cm(2). (Pb,La)TiO3 films are deposited at T-s=650 degreesC and PO2=0.1 mbar. The CeO2 buffer stimulates [001] (Pb, La)TiO3 texture. The films have sharp layer interfaces and uniform composition inside their respective layers.