산화주석을 이용한 금속-반도체 접합형 가스센서에 관한 연구

조원일; 조병원; 이성래; 윤경석

HWAHAK KONGHAK, Vol.29, No.1, 81-88, February, 1991

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산화주석을 이용한 금속-반도체 접합형 가스센서에 관한 연구

A Study of Metal-Semiconductor Schottky Diode Gas Sensor Using Stannic Oxide

조원일, 조병원, 이성래, 윤경석

초록

피검가스의 선택성을 향상시키기 위하여 n형 반도체인 산화주석 소결체에 Pb, Pt 및 Co를 첨가한 다음 An-film을 증착시킨 금속-반도체 접합형 가스센서를 제조하여 가스감도, 가스선택성, 측정방법 및 I-V특성 등을 조사하였다. 가스검지특성은 Pb과 Pt을 첨가한 소자가 우수하였고, 특히 Pb이 첨가된 것은 상온에서도 수소가스에 대한 응답특성이 있었으며, 가스선택성은 소자의 온도를 적절히 조절함으로써 향상시킬 수 있었다. 또한 가스검지방식은 정전류방법보다 정전위방법이 소자의 재생속도면에 있어서 더 효과적이었다. 다이오드형 가스센서의 I-V특성측정을 통하여 Pb과 Pt을 첨가한 소자가 Pt이 첨가된 소자보다 수소에 대한 검지특성이 우수한 것으로 나타났다.

Metal-semiconductor schottky diode type gas sensors for enhancing gas selectivity were prepared by ion coating of gold on sintered SnO₂ pellets which were impregnated by Pd, Pt and Co. Their gas sensitivities and selectivites, gas detection methods and their I-V characteristics were investi-gated with the variation of sensing temperatures, gas concentrations and the kinds of gas. The gas sensitivity was improved by Pd and Pt, especially for Pd impregnated sensor element its sensitivity to H₂ was confirmed at room temperature. Also the gas selctivity could be improved by setting the sensing temperature at optimum value. The potentiostatic method was better than the galvanostatic method in the regeneration aspect of a sensor element. From the I-V characteristics of diode type gas sensor, H₂ concentration was measured at room temperature by detecting the current under low bias potential and the gas sensitivity to hydrogen was higher in the presence of Pd than Pt.

[References]

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[1] Cho WI, Cho BW, Yun KS, HWAHAK KONGHAK, 28(4), 430 (1990)

[2] Seiyama T, Kato A, Fujiishi K, Nagatani M, Anal. Chem., 34, 1502 (1962)

[3] Seiyama T, Kagawa S, Anal. Chem., 38, 1069 (1966)

[4] Obayashi H, Sakurai Y, Gejo T, J. Solid State Chem., 17, 299 (1976)

[5] Windischmann H, Mark P, J. Electrochem. Soc., 126, 627 (1979)

[6] Shaver PJ, Appl. Phys. Lett., 11, 255 (1967)

[7] Yamamoto N, Tonomura S, Matsuoka T, Tsubomura H, Surf. Sci., 92, 400 (1980)

[8] Lundstrom I, Shivaraman S, Svensson C, Lundkvist L, Appl. Phys. Lett., 26, 55 (1975)

[9] Lundstrom KI, Shivaraman MS, Svensson C, J. Appl. Phys., 46, 3876 (1975)

[10] Lundstrom I, Shivaraman MS, Svensson C, Surf. Sci., 64, 497 (1977)

[11] Steele MC, MacIver BA, Appl. Phys. Lett., 28, 687 (1976)

[12] Yamazoe M, Fuchigami J, Kishikawa M, Seiyama T, Surf. Sci., 86, 335 (1979)