Electron emissions from arrays of silicon tips coated with barium strontium titanate (BST) (Ba0.67Sr0.33)TiO3 ferroelectric thin film have been investigated. Sol-gel technique was used to prepare the (Ba0.67Sr0.33)TiO3 ferroelectric solution. A conformal and stable (Ba0.67Sr0.33)TiO3 thin film coating of similar to 30 nm on silicon tips was achieved by spin coating and thermal annealing. Silicon tips coated with BST ferroelectric film show considerable improvement in electron emission. The coated tips have low turn-on electric fields ranging from 4 to 10 V/mum, which are significantly lower than that of the uncoated silicon tips with turn-on electric field of similar to 70 V/mum. Fowler-Nordheim (F-N) plots of the emission data confirm that the emission conformed to F-N emission behavior and indicate that the coated silicon tips have a lower work function than the uncoated silicon tips. Sol-gel ferroelectric thin film coating is an efficient and practical way to improve silicon tip emission behavior.