We studied the effects of Ge preamorphization (PAM) and Ti deposition method on 0.25 mum Ti-salicide junctions in comparison with As PAM. For each PAM scheme, ion implantations are performed at 2E14 ion/cm(2) dose and 20 keV energy using As-75 and GeF4 ion sources. Ionized physical vapor deposition and collimated type dc-magnetron sputtering are used for depositing similar to 300 Angstrom Ti for this study. Ge PAM showed lower sheet resistance (similar to 48 Omega /sq.) and better within-wafer uniformity than As PAM at 0.25 mum line width of n+ /p-well junctions. This is attributed to enhanced C54-silicidation at n + junction. At p+ junctions, comparable performance in sheet-resistance reduction at fines lines for both As and Ge PAM schemes. Junction leakage current (JLC) levels are below similar to 1E14 A/mum(2) at area patterns for all process conditions, whereas no degradation in JLC are shown under Ge PAM condition even at edge-intensive patterns. Junction breakdown voltage and contact resistances are satisfactory at all process conditions.