The chromium-doped ZnTe layers were grown by molecular beam epitaxy technology on the GaAs substrates. The metallic chromium was used as a dopant. The characteristic emission of the Cr2+ ions that is incorporated into ZnTe epilayers was obtained. However, the attempt of doping by CrI3 has shown that the halides induce a deterioration of the surface morphology and are inefficient dopants for II-VI semiconductors.