Carbon-doped InGaAs was grown at two growth rates by chemical beam epitaxy using carbon tetrabromide as the dopant precursor. Surface roughness was measured using atomic force microscopy. Step-flow growth was observed for undoped InGaAs but a roughening of the surface and loss of step-flow growth occurred at high carbon-doping levels, possibly due to etching effects. The point at which the surface grew rough also corresponded to an increase in the variability of carbon. as reported by secondary ion mass spectrometry. Increasing the growth rate allowed the to remain smooth at higher carbon concentrations. The hole concentration saturated for samples grown at both growth rates. Carrier activation was slightly better in samples grown at a high growth rate. The ability to maintain good surface morphology at elevated carbon concentrations is critical for the fabrication of high frequency heterojunction bipolar transistors.