Two-dimensional carrier profiling using scanning spreading resistance microscopy (SSRM) has recently been reported for Si-and InP-based structures. In this article, we report SSRM measurements solely on III-V material-based structures. We have studied GaAs and InP doping staircase structures, prepared using molecular-beam epitaxy. These structures were then used as calibration standards for the profiling of carrier density in state-of-the-art HI-V-based optoelectronic devices. We discovered that SSRM data on GaAs can be obtained with either polarity; however, only one polarity (positive or negative sample bias for n- or p-GaAs, respectively) produces SSRM results that show quantitative correlation with dopant concentration as determined by secondary ion mass spectrometry (SIMS). In comparison, SSRM measurements using both bias polarities on n-InP correlates well with SIMS, while p-InP exhibits a similar polarity dependence to p-type GaAs. A physical model based on a Schottky junction is proposed to explain these results. We also report calibrated SSRM measurements on GaAs and InP heterojunction bipolar transistor structures.