Previous Article Next Article Table of Contents Journal of Materials Science Letters, Vol.18, No.5, 385-388, 1999 DOI10.1023/A:1006680617207 Export Citation Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (NS) implantation process Jia YM, Lim CW, Bourdillon AJ, Boothroyd C Please enable JavaScript to view the comments powered by Disqus.
