Novel (meth)acrylate tetrapolymers based on 2-hydroxyethyl methacrylate (HEMA) were synthesized via free-radical polymerization in refluxing xylene under monomer-starved conditions for use in negative photoresist formulations. 2,2'-Azobis(2-methylbutyronitrile) was used as initiator and 2-mercaptoethanol as chain transfer agent. Optimized resist formulations were obtained with a relatively narrow polydispersed (D = 1.86) low molecular weight copolymer (M-n = 1677) of 2-hydroxyethyl methacrylate (HEMA), isobornyl methacrylate (IBMA), cyclohexyl methacrylate (CHMA) and acrylic acid (AA), in a 40/30/23/7 weight ratio. A novel high-resolution single layer negative tone photoresist suitable for 193 nm and e-beam lithography that meets basic performance requirements (aqueous-base development, enhanced etch resistance, sub-0.2 mum resolution) was developed from the aforementioned (meth)acrylate tetrapolymer, the poly(2-hydroxyethyl methacrylate-co-cyclohexyl methacrylate-co-isobornyl methacrylate-co-acrylic acid) (PHECIMA) and a sulfonium salt photo acid generator. The key-components for the negative image formation (photoacid induced crosslinking) are the hydroxyl groups of the HEMA moieties. The swelling-free negative resist material was developed in diluted aqueous base [tetramethyl ammonium hydroxide, (TMAH) 0.26 x 10(-2) N] and presented enhanced etch resistance without the use of etch resistance promoters. 0.20-0.14 mum lines were obtained upon 193 nm and/or e-beam lithography.