The integration process, low-k hybrid-organic-siloxane-polymers (HOSP) and photoresist stripping process have been investigated. The dielectric properties of HOSP films are degradated after photoresist removal. This is because photoresist stripping processes destroy the functional groups and induce moisture uptake in HOSP films. In this study, NH3-plasma treatment was used for HOSP films to form a thin nitrogen-containing layer, preventing HOSP films from O-2 plasma ashing and chemical wet stripper damage during photoresist removal. The leakage current is decreased significantly and the dielecric constant is maintained at a low value after photoresist removal. These experimental results show that NH, treatment is a promising technique to enhance the resistance of HOSP films to the photoresist stripping process.