Silicon films were deposited onto graphite substrates by means of a plasma-enhanced chemical vapor deposition (PECVD) process from trichlorosilane (SiHCl3) hydrogen aas mixtures at a substrate temperature of 450 degreesC. The plasma was operated at a frequency of 13.56 MHz and a pressure of 500 Pa. Deposition rates of 340 nm min(-1) and greater were achieved, The films were examined by optical and scanning electron microscopy, X-ray diffractometry and elastic-recoil detection analysis. The as-deposited films were nanocrystalline. They were then recrystallized by means of a zone melting process realized by a line-shaped electron beam being scanned over the surface. To achieve sufficient wettability during recrystallization, methane (CH4) was added to the atmosphere at the beginning of plasma-enhanced deposition. The films obtained had a polycrystalline structure with a typical grain size of 100 mum in width (i.e. perpendicular to the direction of scanning) and up to several min in length. The chlorine content of the silicon films was significantly reduced by recrystallization impurities of hydrogen and oxygen also decreased, while the carbon content increased.