Exposure of thin (20 nm less than or equal to d less than or equal to 80 nm) An films to solutions of strongly interacting Lewis bases, e.g. organothiols, I-, results in adsorption which raises the resistivity of the metal film similar to2%. The relative ease of measuring resistivity via a four-point probe and the large signal-to-background ratio which characterizes the measurement makes electrical conduction measurements an attractive candidate for chemical sensors and studies of the liquid-solid interface. It is widely accepted that surface contributions to resistivity are determined both by electronic structure in the near-surface region and by morphology. In these experiments An film sensitivity to molecular adsorption was varied by controlling surface roughness. Resistivity changes were measured on smooth annealed An films, on the same films after etching with CN-, and then after subsequent treatment with I-. After each treatment the film morphology was characterized by atomic force microscopy (AFM), and the resulting power spectral densities were correlated with resistivity changes resulting from standard exposures to C16H33SH. These measurements were used to understand the role of morphology in determining the sensitivity of resistivity measurements to molecular adsorption. As expected CN-significantly roughened the annealed An films, a change accompanied by an increase in sensitivity to adsorption. Subsequent I- exposure smoothed the films at all length scales, but surprisingly the sensitivity increased again. A two-site model is proposed which explains the results in terms of the competing effects of increased surface area and changes in surface site densities caused by chemical etching.