Laser chemical vapor deposition (LCVD) of titanium carbide (TiC) coatings onto tantalum substrates using hydrogen gas, titanium tetrachloride (TiCl4) and either methane (CH4) or acetylene (C2H2) source gasses was investigated. The influences of the molar ratio of the source gases and the deposition temperature on the phase assemblage, composition, and morphology of the coatings was examined. Using C2H2, nearly stoichiometric coatings were produced at 1000degreesC and at a TiCl4/C2H2 ratio of 1/0.4. Stoichiometric coatings were also produced using CH4 but the deposition temperature was 400degreesC higher and a much larger fraction of the carbon source was required compared to C2H2. Although deposition rates were much slower when using CH4, the coatings exhibited a smoother surface finish and had a higher density compared to those produced using C2H2. The suitability of CH4 and C2H2 as carbon sources for depositing stoichiometric, phase-pure coatings is discussed in light of these results.