Thin boron nitride films have been deposited via plasma-assisted dissociation of the single-source precursor boron triazide. Infrared absorption and X-ray photoelectron spectroscopic studies have shown that the films are composed of sp(2)-bonded boron nitride, with a B/N ratio very near 1:1. The films are significantly more resistant to degradation in air and contain fewer impurities than those previously grown from dissociation of boron triazide. The film growth mechanism is discussed, along with information on the role ion bombardment plays in the resultant properties of the films.