Perovskite SrRUO3 (SRO) films are promising for use as electrodes for (Ba,Sr)TiO3 and Pb(ZrTi)O-3 film capacitors. However, SrRUO3 decomposes during the forming gas (3% H-2 + balanced N-2) anneal at temperatures as low as 200 degreesC. An adequate encapsulation layer for SrRuO3 is necessary in order to avoid the H-2 anneal-induced decomposition of SrRUO3. Al2O3,SiO2,Si3N4, and Si3N4/SiO2 are studied as encapsulation layers for SRO, and it is confirmed that Al2O3 and Si3N4/SiO2 coatings on SRO can effectively prevent its decomposition.