Ion projection techniques have shown promising prospects to applications in direct high energy, high dose, and high quality material modification. The major advantages are a parallel processing for short implantation times and a mask separated from the target, which allows for implantation with high resolution and high quality even under extreme conditions. A system for high beam power has been developed. The key issues of our high energy ion projection system are the single solenoid tens with low imaging aberrations and the stencil mask which has to provide the necessary high resolution features and to withstand a beam power up to 100 W/cm(2). A high aspect ratio stencil mask is used for this purpose. The system has a demagnification factor of 16-22 and showed a resolution of 300 nm so far which is close to the physical limit for MeV ions from lateral straggling in the target. The setup, the mask, and some applications are presented.