In this paper, the syntheses and thermal modulation of ternary single source precursors, based on the [{ER3}(2)Cu(YR')(2)In(YR')(2)] architecture in good yields are described (E=P. As, Sb: Y=S, Se, and R=alkyl, aryl). Most importantly. we have successfully prepared the first liquid CuInS2 (CIS) single source precursors, (when R = B u, Y = S, and R'= Et, or Pr). These new compounds were utilized for spray chemical vapor deposition (CVD) of copper indium disulfide, an absorber layer for the fabrication of thin-film solar cells. Thermogravimetric analyses (TGA) and Differential Scanning Calorionnetry (DSC) demonstrate that controlled manipulation of the steric and electronic properties of either the group five donor and/or chalcogenide moiety permits directed adjustment of the thermal stability and physical properties of the precursor. Preliminary studies show that these derivatives produce CuInS2 thin-films at low temperature. X-Ray diffraction studies, EDS and SEM confirmed the formation of the single-phase CuInS2 thin-films.