Bismuth layered-perovskite SrBi2Ta2O9 (SBT) thin films were prepared by chemical solution deposition (CSD) method. The characterization of SBT thin films was performed as a function of the amount of bismuth excess and the annealing temperature. The crystal structure and surface morphology were examined by using x-ray diffraction (XRD) and field emission scanning electron micrograph (FESEM). In addition, the electrical properties of the fabricated ferroelectric capacitors were also measured for the optimum process conditions. With more than 20% Bi excess, the dense films without any voids and polycrystalline phase with large grains were formed, and annealing at 800 ℃ provided smooth surface and large circular grains with improved ferroelectric properties.