Characterization of Parylene Deposition Process for the Passivation of Organic Light Emitting Diodes

Taejin Lee; Junho Lee; Chinho Par

Korean Journal of Chemical Engineering, Vol.19, No.4, 722-727, July, 2002

DOI10.1007/BF02699324 Export Citation

Characterization of Parylene Deposition Process for the Passivation of Organic Light Emitting Diodes

Taejin Lee , Junho Lee, and Chinho Par^†

School of Chemical Engineering and Technology, Yeungnam University, 214-1 Dae-dong, Gyongsan 712-749, Korea

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The chemical vapor condensation process of Parylene-N thin films was investigated and applied to the passivation of the organic light emitting diodes (OLEDs). The effects of process variables on the deposition rate were studied, and it was found that the deposition rate of Parylene increases with increasing precursor sublimation temperature but decreases with increasing substrate temperature. The dependence of deposition rate was well explained by the condensation polymerization model of the monomer on the surface. The Parylene film was used as a passivation layer for OLEDs, and as a result, the lifetime of the passivated OLEDs was increased by a factor of about 2.3 compared with that of non-passivated OLEDs.

Keywords:Organic Light Emitting Diodes (OLEDs);Passivation;Parylene;Chemical Vapor Condensation (CVC)

[References]

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[Referenced By]

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[1] Alexandrova L, Vera-Graziano R, "Polymeric Materials Encyclopedia," edited by Salamone, J.C., CRC Press, New York (1996)

[2] Burrow PE, Balovic V, Forrest SR, Sapochak LS, McCarty DM, Thompson ME, Appl. Phys. Lett., 65, 2922 (1994)

[3] Fujihira M, Do LM, Koike A, Han EM, Appl. Phys. Lett., 68, 1787 (1996)

[4] Gorham WF, J. Polym. Sci. A: Polym. Chem., 4, 3027 (1966)

[5] Gorham WF, Niegisch WD, "Encyclopedia of Polymer Science and Technology," edited by Mark, H.F., Gaylord, N. and Bikales, N.M., Interscience, New York (1971)

[6] Goschel U, Walter H, Langmuir, 16(6), 2887 (2000)

[7] Han EM, Do LM, Yamamoto N, Fujihira M, Thin Solid Films, 273(1-2), 202 (1996)

[8] Kim EJ, Kim SK, Park RH, Kim JT, HWAHAK KONGHAK, 36(6), 896 (1998)

[9] McElvain J, Antoniadis H, Hueschen MR, Miller JN, Roitman DM, Sheatts JR, Moon RL, J. Appl. Phys., 80, 6022 (1996)

[10] Szwarc M, Polym. Eng. Sci., 16, 473 (1976)

[11] Tang CW, VanSlyke SA, Appl. Phys. Lett., 51, 913 (1987)

[12] Yamashita T, Mori T, Mizutani T, J. Phys. D: Appl. Phys., 34, 740 (2001)

[13] Yang GR, Ganguli S, Karcz J, Gill WN, Lu TM, J. Cryst. Growth, 183, 385 (1998)