Growth kinetics of the Mo-silicide layers formed by chemical vapor deposition of Si on a Mo substrate from the SiCl4-H-2 gas mixtures at 1000 degreesC was investigated using the 'Wang' analysis of multilayer diffusional growth, All of the three Mo-silicide phases, tetragonal-MoSi2, Mo5Si3 and Mo3Si in the Mo-Si binary phase diagram were observed by cross-sectional transmission electron microscopy, and obeyed a parabolic rate law indicating diffusion-controlled growth. The intrinsic growth rates of the Mo5Si3 and Mo3Si layers were estimated from their apparent growth rates measured in the Si/Mo diffusion couple. Good agreement was found with the reported values measured from apparent growth rates at the MoSi2/Mo and Mo5Si3/Mo diffusion couples, respectively.