Results are presented of a study on the mechanical stress dependence of the resistance of polycrystalline silicon (Poly-Si) films doped with different atomic species, namely, with boron and phosphorus ions. B-doped films of 400 nm and P-doped films of 250 nm thickness were deposited by low-pressure chemical vapor deposition at 620 degreesC on thermally oxidized silicon wafers. A controlled amount of external stress was applied to the silicon wafers in order to investigate the impact on the electrical performance of the implanted Poly-Si resistors. The resistance of the B-doped Poly-Si films is shown to increase by the mechanical stress, while the resistance of the P-implanted Poly-Si films remained unchanged. It is concluded that this difference is related to the structural differences between Poly-Si films implanted with boron and phosphorus, respectively.