화학공학소재연구정보센터
Thin Solid Films, Vol.406, No.1-2, 224-227, 2002
Preparation of oxycarbonate (BaxSr1-x)(2)CuO2(CO3) epitaxial films by molecular beam epitaxy
Copper oxycarbonate thin films of (BaxSr1-x)(2)CuO2(CO3) have been prepared on SrTiO3(001) by molecular beam epitaxy using NO2 gas as an oxidant and CO2 gas. The films have been grown at 350-500 degreesC. At high substrate temperature or at low CO2 pressure, (BaxSr1-x)(2)CuO3 was formed instead of (BaxSr1-x)(2)CuO2(CO3), and the films became amorphous at low temperature. X-Ray diffraction and reflection high-energy electron diffraction observations indicated that (BaxSr1-x)(2)CuO2(CO3) grows along the [001] crystal orientation on SrTiO3 (001) With the following epitaxial relationship: (BaxSr1-x)(2)CuO2(CO3)[100]//SrTiO3[110] and (BaxSr1-x)(2)CuO2(CO3)[110]//SrTiO3 [100]. The depth profile of secondary ion mass spectrometry signals indicated the incorporation of carbon into the films. Electrical measurements showed that the as grown Films exhibit a semiconducting behavior.