Glassy thin films of bismuth(III) selenide were deposited onto glass and polyester substrates using a chemical bath deposition technique. X-Ray diffraction analysis was used for identification of the material obtained. Optical and electrical properties of the films were investigated. According to the resistance-temperature measurements, Bi2Se3 thin films are typical semi-conducting materials with calculated activation energies of 0.2 and 1.1 eV for lower and higher temperatures, respectively, and the majority charge carriers are electrons. As-deposited films are characterized with band gap energy of 2.3 eV, which does not exhibit significant changes upon annealing.