A thin film Sb2Te3-Bi2Te3 based thermocouple was fabricated by co-evaporation. The conditions for deposition have been investigated as a function of substrate temperature (T-s) and flux ratio [F-r=F(Te)/F(Sb,Bi)] and optimised to achieve a high thermoelectric power factor. It has been observed that the Seebeck coefficient and electrical conductivity of p-type Sb2Te3 thin films (alpha(p), rho(p)) and n-type Bi2Te3 thin films (alpha(n), rho(n)) deposited by co-evaporation were found to be approximately 160 muV/K, 3.12 X 10(-3) Ohmcm and -200 muV/K, 1.29 X 10(-3) Ohmcm, respectively. From optimal deposition parameters, a thin film thermocouple was fabricated and operated in Peltier mode. The observed maximum value for temperature difference between hot and cold end is approximately 15.5 K for a current of 55 mA. The figure of merit and coefficient of performance of the thermocouple are estimated.