Magnetron sputtered polycrystalline Ta and Ta(Si) barriers for copper metallization schemes were modified by nitrogen as well as oxygen high dose ion implantation to improve their thermo-mechanical stability. Ion bombardment changed the initial polycrystalline microstructure to amorphous-like. In contrast to pure Ta. Ta(Si) layers were already amorphous or nanocrystalline after deposition. In this case, the annealing temperature at which formation of a well crystallized structure occurs increased by approximately 100 K as a result of the implantation. In order to demonstrate the improvement in the barrier properties of the implanted Ta films, the intermixing of Ta and Cu at the interface of corresponding layer structures was measured as a function of the annealing temperature by depth profiling using Auger electron spectroscopy (AES). The thermal stability of Ta and Ta(Si) barriers increased from 600 degreesC/1 h for the non-implanted layers up to 750 degreesC/1 h after implantation of nitrogen or oxygen.