The evolution of buried structures of cobalt disilicide formed in a Si(1 0 0) matrix by 400 keV Co+ implantation at 875 K substrate temperature was studied by cross-sectional transmission electron microscopy. Varying the dose of implanted ions allowed a detailed study of the role of defects created by the Co+ flux in nucleation and growth Of CoSi2 precipitates. Implantation induced defects create diffusive links that assist in anisotropic diffusion of Co in the bulk resulting in organized self-growth of long rectangular precipitates with alignment along the <1 1 1> direction toward the surface. The transport of the implanted material along these diffusive links eventually leads to the formation of a second CoSi2 band between the main layer and the surface. This mechanism is considered to be the reason for the formation of several buried layers of disilicide.