A new metalorganic ruthenium compound which contained two beta-diketonate and two CO ligands arranged in cis-disposition was used in preparation of high quality ruthenium dioxide (RuO2) thin films by cold-wall metalorganic chemical vapor deposition. A detailed characterization of the films including scanning electron microscopy (SEM), electrical resistivity, Raman scattering and X-ray diffraction measurements were carried out. The surface morphology of the films was investigated by SEM, from which a columnar growth pattern was observed using a cross-sectional scanning electron micrograph analysis. The resistivity measurement shows a metallic conducting characteristic, while Raman study indicates the formation of a high quality, nearly stress-free RuO2 film. In addition, changes of structural and electrical properties after thermal annealing are discussed.