Thin Solid Films, Vol.414, No.2, 251-255, 2002
Electron irradiation effects in multi-layer nitric oxide films on Ge(100)
Results are presented for low energy (600 eV) electron irradiation of multi-layers of nitric oxide (NO) adsorbed on a clean Ge(1 0 0) surface at 110 K. Electron interaction with the NO layer is shown to result in 'electron stimulated associated desorption' as well as dissociation processes. Significant concentrations of molecular nitrogen are both created on the surface and desorbed into the vacuum upon electron irradiation. Although temperature programmed desorption results indicate non-dissociative adsorption of NO at 110 K, high resolution electron energy loss spectroscopy provides no evidence of an N-O stretch frequency which would be indicative of non-dissociative adsorption. This observation has been interpreted as suggestive of formation of a non-dipole active dimer (NO)(2) on the surface. Electron irradiation of the NO multi-layer is shown also to result in formation of germanium nitride.