Previous Article Next Article Table of Contents Journal of Materials Science Letters, Vol.21, No.8, 653-655, 2002 DOI10.1023/A:1015656508960 Export Citation Effects of recovery annealing on reliability of SrBi2Ta2O9 based ferroelectric memory devices Koo JM, Kim J, Lee EG Please enable JavaScript to view the comments powered by Disqus.
