Undoped and phosphorous doped polycrystalline silicon (poly-Si) films were deposited using a SiF4/H-2 gas mixture at a substrate temperature of 200degreesC by radio frequency plasma enhanced chemical vapor deposition (rf-PECVD). Fourier transform infrared (FTIR) spectroscopy and x-ray diffraction (XRD) experiments reveal that the present poly-Si films are equivalent to the poly-Si films deposited at high temperature (>600degreesC), XRD and scanning electron microscope observations show that the crystalline quality of slightly P-doped film is better compared to that of undoped poly-Si films. Phosphor-us atom concentration in the slightly P-doped poly-Si film is 5.0 X 10(16) atoms/cm(3). Association of a few phosphorous atoms in the silicon matrix enhances crystallization as eutectic-forming metals do. Dark conductivity of slightly P-doped film is 4 orders of magnitude higher, although mobility-lifetime product (etamutau) is 2 orders of magnitude lower than that of undoped film. The presence of higher density of strained Si-Si bonds in the amorphous regions of slightly P-doped films revealed by FTIR spectroscopy reduces the value of etamutau.