In this article, we investigated the dependence of optical and electrical properties of hydrogenated amorphous silicon carbide (a-SiC:H) films on annealing temperature (T-a) and radio frequency (rf) power. The substrate temperature (T-s) was 250 degreesC. the rf power was varied from 30 to 400 W, and the range of T-a was from 400 to 600 degreesC. The a-SiC:H films were deposited by using the plasma enhanced chemical vapor deposition system on Corning 7059 glasses and p-type Si (100) wafers with a SiH4+CH4 gas mixture. The experimental results have shown that the optical bandgap energy (E-g) of the a-SiC:H thin films changed little on the annealing temperature while E-g increased with the rf power. The Raman spectrum of the thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs. The current-voltage characteristics have shown good electrical properties in relation to the annealed films.