We have observed muc-Si:H films grown in the glass substrate in electron cyclotron resonance plasma-enhanced chemical vapor deposition employing two-step growth (TSG) method, where the seed layer was formed without charged species firstly, and subsequently, the film with charged species. The muc-Si:H films with smooth surface and high crystallinity were synthesized with a relatively high deposition rate at a low substrate temperature by TSG. By Fourier transform infrared attenuated-total reflection, it was found that the surface roughness and crystallinity of seed layer were related to the ratio of SiH bonds over SiH2 ones in the film. Consequently, the control of chemical bonds at the initial layer is of importance and TSG method is effective for the formation of muc-Si:H film with high quality.