A method to monolithically integrate optoelectronic devices with separately fabricated very large scale integrated circuitry has been investigated, and an aligned bonding procedure involving an intermediary metal film has been developed. The optoelectronic device heterostructures are grown epitaxially and patterned on the growth substrate, and then aligned to and bonded into dielectric wells on the target integrated circuit (IC) substrate, an entire wafer at a time. The metal film structure is responsible for the mechanical attachment of the devices to the integrated circuit substrate as well as for the ohmic contact between the parts. Bonding is performed at a low enough temperature to prevent damage to the electronics on the target substrate. Finally, the growth substrate is removed and the heterostructures are processed into optoelectronic devices integrated monolithically with the electronics, leaving a relatively planar optoelectronic integrated circuit. Results will be presented from initial experiments of bonding patterned devices to simple gallium arsenide (GaAs) substrates, and more importantly from recent experiments of bonding devices onto GaAs IC chips from the OPTOCHIP project. The procedure can also be used to integrate III-V devices onto silicon substrates.