Spin-coated low-k dielectrics are now widely used in integrated circuit processing due to their low permittivity and planarization properties. Another area of potential application is in large area digital imaging using amorphous silicon (a-Si:H) technology where low-k dielectrics enable new integration schemes for thin film transistors (TFT) and sensors. In this work, the properties of spin-coated, polymeric, low-k dielectric materials, BCB (benzocyclobutene) and HSQ (hydrogen silsesquioxane), are studied after treating them with low temperature anneals. Fourier transform infrared spectroscopy (FTIR), high frequency capacitance-voltage, topographic planarization, and wafer deflection stress measurements have been used to characterize the films so as to correlate with processing conditions. Lower k values are obtained for lower process temperatures and are correlated by capacitance and FTIR measurements. Annealing in the presence of O-2 appears to increase the permittivity. The BCB films yield low stress and good (>90%) planarization and are suitable as interlevel dielectrics in the vertical integration of a-Si TFT and sensor at-rays.