This work presents results from the characterization of ion-assisted chemical vapor deposition of platinum from trimethyl-methylcyclopentadienyl-platinum (C9H16Pt). Films were deposited in squares ranging from 50 to 200 mum on a side using a focused ion beam system. The effects of Ga+ ion flux and precursor flux on the deposited films' composition and resistivity were determined. Films were characterized using atomic force microscopy, Rutherford backscattering spectrometry, and Auger electron spectroscopy. Results show that increasing precursor nux at constant ion flux increases Pt and C, but decreases Ga content of the film. Increasing ion flux at constant precursor flux increases Pt content, while decreasing C content of the films. Resistivity did not depend oil the thickness of 50-200 nm tick films. Resistivity was shown to follow C content, with films with lower C content having lower resistivity.